Figure 2.9: Schematic LEED-AES Surface Analysis System. The locations of the sample holder (SH), retarding-field analyzer (RFA), deposition sources (DP), ion gun (IG), electron gun (EG) and windows (W) are indicated in the top view; associated pumps, gauges, etc..... are not indicated.

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• Figure 2.1: Schematic LEED-AES retarding-field analyzer (RFA).
• Figure 2.2: Schematic LEED pattern for Si{111} 1x1.
• Figure 2.3: Schematic LEED pattern for Si{111}rt3*rt3-30-X.
• Figure 2.4: A LEED pattern of Si{111}7*7, at 100 eV.
• Figure 2.5: Schematic LEED Data Acquisition System.
• Figure 2.6: Reliability-factor (R_VHT, r_ZJ, and R_P) contour plots for the surface of TB{11-20}.
• Figure 2.7: Schematic AES Data Acquisition System.
• Figure 2.8: Typical Auger electron spectrum for Au deposited upon a Si{111} surface.
• Figure 2.9: Schematic LEED-AES Surface Analysis UHV System.
• Figures 3.1, 3.2, 3.3, 3.4, 3.5, and 3.6: The LEED I(V) spectra of Si{111}rt3*rt3-30-B.