The LEED I(V) spectra of Si{111}rt3xrt3-30-B.
Theoretical spectra have been calculated using a relaxed B_5-model structure.
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- Figure 2.9: Schematic LEED-AES Surface Analysis UHV System.
- Figures 3.1,
3.2,
3.3,
3.4,
3.5, and
3.6: The LEED I(V) spectra of Si{111}rt3*rt3-30-B.
- Figure 3.7: The H_3-, T_4-, and B_5-model structures of the
Si{111}rt3*rt3-30-X surfaces in the unrelaxed (starting) state.
- Figure 3.8: The minimum Keating energies for the
H_3-, T_4-, and B_5-model structures of the Si{111}rt3*rt3-30-X
surfaces as a function of the adsorbate's covalent radius.
- Figure 3.9: The H_3-, T_4-, and B_5-model structures of the Si{111}rt3*rt3-30-Al
surface in the relaxed state, as determined by a Keating analysis.
- Figure 3.10: The H_3-, T_4-, and B_5-model structures of the Si{111}rt3*rt3-30-B
surface in the relaxed state, as determined by a Keating analysis.
- Figure 3.11: The minimum Keating energies for the
H_3-, T_4-, and B_5-model structures of the Ge{111}rt3*rt3-30-X
surfaces as a function of the adsorbate's covalent radius.