Figure 3.8 The minimum Keating energies for the H_3-, T_4-, and B_5-model structures of the Si{111}rt3*rt3-30-X surface as a function of the adsorbate's covalent radius.

Figure 3.8 The minimum Keating energies for the H_3-, T_4-, and B_5-model structures of the Si{111}rt3*rt3-30-X surface as a function of the adsorbate's covalent radius.
The tetrahedral covalent radii for C, B, Si, Ge, Al, Ga, Sn, In, and Pb are 0.77, 0.88, 1.18, 1.22, 1.26, 1.26, 1.40, 1.44, and 1.46 Ang., respectively.

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Figures 3.1, 3.2, 3.3, 3.4, 3.5, and 3.6: The LEED I(V) spectra of Si{111}rt3*rt3-30-B.
Figure 3.7: The H_3-, T_4-, and B_5-model structures of the Si{111}rt3*rt3-30-X surfaces in the unrelaxed (starting) state.
Figure 3.8: The minimum Keating energies for the H_3-, T_4-, and B_5-model structures of the Si{111}rt3*rt3-30-X surfaces as a function of the adsorbate's covalent radius.
Figure 3.9: The H_3-, T_4-, and B_5-model structures of the Si{111}rt3*rt3-30-Al surface in the relaxed state, as determined by a Keating analysis.
Figure 3.10: The H_3-, T_4-, and B_5-model structures of the Si{111}rt3*rt3-30-B surface in the relaxed state, as determined by a Keating analysis.
Figure 3.11: The minimum Keating energies for the H_3-, T_4-, and B_5-model structures of the Ge{111}rt3*rt3-30-X surfaces as a function of the adsorbate's covalent radius.