Table 3.6: The structural parameters for the relaxed T_4-model surfaces of Si{111}rt3*rt3-30-X, as determined by a Keating analysis.

Table 3.6: The structural parameters for the relaxed T_4-model surfaces of Si{111}rt3*rt3-30-X, as determined by a Keating analysis.
The tetrahedral covalent radii for C, B, Si, Ge, Al, Ga, Sn, In, and Pb are 0.77, 0.88, 1.18, 1.22, 1.26, 1.26, 1.40, 1.44, and 1.46 Ang., respectively.
The parameter increment is 0.001 Ang.

Parameter R_X=0.98 (Ang.) 1.08 1.18 1.28 1.38 1.48

Delta z_X (0 ) (Ang.) -0.079 +0.119 +0.292 +0.469 +0.628 +0.776

Delta z_Si(1 ) -0.050 -0.044 -0.040 -0.035 -0.029 -0.025

Delta r_Si(1 ) -0.168 -0.152 -0.140 -0.127 -0.115 -0.103

Delta z_Si(2a) -0.368 -0.345 -0.329 -0.311 -0.293 -0.276

Delta z_Si(2b) +0.141 +0.134 +0.129 +0.124 +0.120 +0.114

Delta z_Si(3a) -0.355 -0.333 -0.317 -0.300 -0.282 -0.266

Delta z_Si(3b) +0.123 +0.117 +0.113 +0.109 +0.105 +0.100

Delta r_Si(4 ) +0.088 +0.084 +0.081 +0.078 +0.074 +0.071

Parameter	R_X=0.98 (Ang.)	1.08	1.18	1.28	1.38	1.48


Delta z_X (0 ) (Ang.)	-0.079	+0.119	+0.292	+0.469	+0.628	+0.776
Delta z_Si(1 )	-0.050	-0.044	-0.040	-0.035	-0.029	-0.025
Delta r_Si(1 )	-0.168	-0.152	-0.140	-0.127	-0.115	-0.103
Delta z_Si(2a)	-0.368	-0.345	-0.329	-0.311	-0.293	-0.276
Delta z_Si(2b)	+0.141	+0.134	+0.129	+0.124	+0.120	+0.114
Delta z_Si(3a)	-0.355	-0.333	-0.317	-0.300	-0.282	-0.266
Delta z_Si(3b)	+0.123	+0.117	+0.113	+0.109	+0.105	+0.100
Delta r_Si(4 )	+0.088	+0.084	+0.081	+0.078	+0.074	+0.071

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Last Update: 6/21/96